We present a robust method for forming high quality ohmic contacts to graphene, which
improves the contact resistance by nearly 6000 times compared to untreated metal/graphene …

A promising route for the synthesis of large-area graphene, suitable for standard device
fabrication techniques, is the sublimation of silicon from silicon carbide at elevated temperatures …

We present a novel method for the direct metal-free growth of graphene on sapphire that
yields high quality films comparable to that of graphene grown on SiC by sublimation. …

Hexagonal boron nitride (h-BN) is a promising dielectric material for graphene-based electronic
devices. Here we investigate the potential of h-BN gate dielectrics, grown by chemical …

We directly demonstrate the importance of buffer elimination at the graphene/SiC(0001)
interface for high frequency applications. Upon successful buffer elimination, carrier mobility …

We present the integration of epitaxial graphene with thin film dielectric materials for the
purpose of graphene transistor development. The impact on epitaxial graphene structural and …

We explore the effect of high-κ dielectric seed layer and overlayer on carrier transport in
epitaxial graphene. We introduce a novel seeding technique for depositing dielectrics by atomic …

We present the methodology used to fabricate an X-ray reflection grating and describe a
technique for grating replication. Further, we present the experimental procedure and results of …

An estimated US $30 trillion of assets under management today take into account some form
of Environmental, Social or Governance (“ESG”) data 2, however, the question remains as …

Developing a means for true bottom-up, selective-area growth of two-dimensional (2D) materials
on device-ready substrates will enable synthesis in regions only where they are needed…